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Proceedings Paper

Quantum correlation between intensity noise of a semiconductor laser and junction-voltage noise near threshold
Author(s): Alexei S. Trifonov; Pavel A. Usachev
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Paper Abstract

The investigations of correlation between intensity noise of semiconductor laser and junction voltage noise were made. The laser was high-power quantum well separate confinement heterostructure (SCH) InGaAsP/GaAs laser with (lambda) equals 0.8 micrometers . The full negative correlation near the threshold between photon flux noise and junction voltage noise in constant-current regime was obtained. It was shown that at room temperature the laser exhibited constant-current regime due to base resistance. The theoretical treatment of correlation coefficient versus pump current was proposed and the role of optical losses has been revealed. The comparison of theoretical and experimental behavior near the threshold were made.

Paper Details

Date Published: 26 April 1995
PDF: 6 pages
Proc. SPIE 2378, Laser Frequency Stabilization and Noise Reduction, (26 April 1995); doi: 10.1117/12.208226
Show Author Affiliations
Alexei S. Trifonov, A.F. Ioffe Physical-Technical Institute (Russia)
Pavel A. Usachev, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 2378:
Laser Frequency Stabilization and Noise Reduction
Yaakov Shevy, Editor(s)

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