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Proceedings Paper

Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap
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Paper Abstract

We have demonstrated selective epitaxial growth of A1Gai_As, with an abrupt transition in the bandgap lateral to the growth direction. Spontaneous compositional modulation, with an associated reduction in the effective bandgap, occurs in AlGaAs grown by molecular beam epitaxy on the sides of grooves in a GaAs substrate. The bandgap is observed to be dependent on the groove orientation. Possible mechanisms for the orientation dependent growth are discussed.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20819
Show Author Affiliations
Michael E. Hoenk, California Institute of Technology (United States)
Kerry J. Vahala, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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