Share Email Print
cover

Proceedings Paper

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Paper Details

Date Published: 20 March 2015
PDF: 9 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251P (20 March 2015); doi: 10.1117/12.2081829
Show Author Affiliations
Satoshi Takei, Toyama Prefectural Univ. (Japan)
Osaka Univ. (Japan)
Makoto Hanabata, Toyama Prefectural Univ. (Japan)
Akihiro Oshima, Osaka Univ. (Japan)
Miki Kashiwakura, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

© SPIE. Terms of Use
Back to Top