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Proceedings Paper

InAs/Ga1-xInxSb superlattices for infrared applications
Author(s): Richard H. Miles; David H. Chow; Thomas C. McGill
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Paper Abstract

We report the successful growth of EnAs/Gai_InSb strained-layer superlattices, which have been proposed for far-infrared applications. Samples were grown by molecular beam epitaxy and characterized by reflection high energy electron diffraction, transmission electron microscopy, x-ray diffraction, photoluminescence, and photoconductivity. Excellent structural quality is achieved for superlattices grown on thick, strain relaxed GaSb buffer layers on GaAs substrates at fairly low substrate temperatures (< 400 °C). Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strained-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, in agreement with the theoretical predictions of Smith and Mailhiot.1'2 In the case of a 45 A/28 A InAs/Gao.751no25Sb superlattice, an energy gap of 80meV (> 15 jim) is measured. These resuits suggest that far-infrared cutoff wavelengths are compatible with the thin superiattice layers required for strong optical absorption in type-Il superlattices.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20815
Show Author Affiliations
Richard H. Miles, Hughes Research Labs. (United States)
David H. Chow, California Institute of Technology (United States)
Thomas C. McGill, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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