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Proceedings Paper

AlGaInN laser diode bar and array technology for high power and individually addressable applications
Author(s): Stephen P. Najda; Piotr Perlin; Tadek Suski; Lucja Marona; Mike Boćkowski; Mike Leszczyński; Przemek Wisniewski; Robert Czernecki; Robert Kucharski; Grzegorz Targowski
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Paper Abstract

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Low defectivity and high uniformity GaN substrates allows arrays and bars of AlGaInN lasers with up to 20 emitters to be fabricated to obtain optical powers up to 4W at 395nm. AlGaInN laser bars are suitable for optical pumps and novel extended cavity systems for a wide range of applications. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be addressed individually allowing complex free-space and/or fibre optic system integration with a very small form-factor.

Paper Details

Date Published: 12 May 2015
PDF: 8 pages
Proc. SPIE 9513, High-Power, High-Energy, and High-Intensity Laser Technology II, 95130G (12 May 2015); doi: 10.1117/12.2081358
Show Author Affiliations
Stephen P. Najda, TopGaN Ltd. (Poland)
Piotr Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Tadek Suski, Institute of High Pressure Physics (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
Mike Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Mike Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Przemek Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Kucharski, Ammono S.A. (Poland)
Grzegorz Targowski, TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 9513:
High-Power, High-Energy, and High-Intensity Laser Technology II
Joachim Hein, Editor(s)

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