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Proceedings Paper

Growth of InAs on GaAs (001) by migration-enhanced epitaxy
Author(s): Bing Liang; K. Ha; Jing Jean Zhang; Patrick T. Chin; Charles W. Tu
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Paper Abstract

Growth of InAs epitaxial layers on GaAs (001 ) by migration-enhanced epitaxy (MEE) and molecular beam epitaxy (MBE) has been studied. Reflection high-energy-electron diffraction (RHEED) patterns were studied, and persistent RHEED intensity oscillations were observed during MEE growth of InAs. The dependence of RHEED oscillation on MEE growth parameters is discussed. InAs layers grown by MEE at low substrate temperature exhibit comparable quality as MBE layers grown at higher substrate temperature.

Paper Details

Date Published: 1 October 1990
PDF: 6 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20813
Show Author Affiliations
Bing Liang, Univ. of California/San Diego (United States)
K. Ha, Univ. of California/San Diego (United States)
Jing Jean Zhang, Univ. of California/San Diego (United States)
Patrick T. Chin, Univ. of California/San Diego (United States)
Charles W. Tu, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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