Share Email Print
cover

Proceedings Paper

InGaN power laser chips in a novel 50W multi-die package
Author(s): Andreas Loeffler; Christoph Eichler; Jens Mueller; Sven Gerhard; Bernhard Stojetz; Soenke Tautz; Clemens Vierheilig; Jelena Ristic; Adrian Avramescu; Markus Horn; Thomas Hager; Christoph Walter; Thomas Dobbertin; Harald Koenig; Uwe Strauss
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we report recent developments on high power blue laser chips. Reduction of internal losses as well as optimized thermal management had been essential to increase optical output power. R and D samples with average performance of 3W optical output at junction temperatures of 130°C are demonstrated. The chips are suitable for use in a novel multi chip housing: For the first time up to 20 blue laser chips have been packaged into one compact housing resulting in the first InGaN laser device with optical output > 50W. The highly integrated package offers a unique small size. The outer dimensions of the package are 25.5mm x 35mm with an emitting surface of 16mm x 16.5mm. Therefore the complexity of optical alignment is dramatically reduced and only a single sheet multi lens array is required for beam collimation. Besides the unique technical performance the multi-die package offers significantly lower assembly costs because of the reduced complexity and assembly time. The butterfly package contains 4 bars with up to 5 multimode laser chips in series connection on each bar operating at 2.3A. The typical module wavelength is 450nm +/- 10nm. At a case temperature of 50°C the R and D samples achieve efficiencies of typ. 30% and an optical output power of 50W corresponding to an electrical power consumption of ~165W. This new technology can be used for high performance light engines of high brightness projectors.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936318 (13 March 2015); doi: 10.1117/12.2081065
Show Author Affiliations
Andreas Loeffler, OSRAM Opto Semiconductors GmbH (Germany)
Christoph Eichler, OSRAM Opto Semiconductors GmbH (Germany)
Jens Mueller, OSRAM Opto Semiconductors GmbH (Germany)
Sven Gerhard, OSRAM Opto Semiconductors GmbH (Germany)
Bernhard Stojetz, OSRAM Opto Semiconductors GmbH (Germany)
Soenke Tautz, OSRAM Opto Semiconductors GmbH (Germany)
Clemens Vierheilig, OSRAM Opto Semiconductors GmbH (Germany)
Jelena Ristic, OSRAM Opto Semiconductors GmbH (Germany)
Adrian Avramescu, OSRAM Opto Semiconductors GmbH (Germany)
Markus Horn, OSRAM Opto Semiconductors GmbH (Germany)
Thomas Hager, OSRAM Opto Semiconductors GmbH (Germany)
Christoph Walter, OSRAM Opto Semiconductors GmbH (Germany)
Thomas Dobbertin, OSRAM Opto Semiconductors GmbH (Germany)
Harald Koenig, OSRAM Opto Semiconductors GmbH (Germany)
Uwe Strauss, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

© SPIE. Terms of Use
Back to Top