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Proceedings Paper

Numerical modeling of radiation effects in Si solar cell for space
Author(s): Alexandre Fedoseyev; Ashok Raman; David Thomas; Stuart Bowden; Jea Young Choi; Christiana Honsberg; Tanmay Monga
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Paper Abstract

Improvements to solar cell efficiency and radiation hardness that are compatible with low cost, high volume manufacturing processes are critical for power generation applications in future long-term NASA and DOD space missions. In this paper, we provide the results of numerical simulation of the radiation effects in a novel, ultra-thin (UT), Si photovoltaic cell technology that combines enhanced light trapping (LT) and absorption due to nanostructured surfaces, separation of photogenerated carriers by carrier selective contacts (CSC), and increased carrier density due to multiple exciton generation (MEG). Such solar cells have a potential to achieve high conversion efficiencies while shown to be rad-hard, lightweight, flexible, and low–cost, due to the use of Si high volume techniques.

Paper Details

Date Published: 16 March 2015
PDF: 11 pages
Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580N (16 March 2015); doi: 10.1117/12.2081064
Show Author Affiliations
Alexandre Fedoseyev, CFD Research Corp. (United States)
Ashok Raman, CFD Research Corp. (United States)
David Thomas, CFD Research Corp. (United States)
Stuart Bowden, Arizona State Univ. (United States)
Jea Young Choi, Arizona State Univ. (United States)
Christiana Honsberg, Arizona State Univ. (United States)
Tanmay Monga, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 9358:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
Alexandre Freundlich; Jean-François Guillemoles; Masakazu Sugiyama, Editor(s)

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