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Proceedings Paper

Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison
Author(s): Chris J. Palmstrom; Tim D. Sands; James P. Harbison; T. G. Finstad; Suzanne Mounier; Leigh T. Florez; Vassilis G. Keramidas; Jane G. Zhu; C. B. Carter
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Paper Abstract

Transition metal aluminides and gallides and rare earth monopnictides have been grown as buried conducting layers in 111-v compound semiconductor heterostructures. These metallic and semi-metallic compounds have the CsC1 and NaC1 structures, respectively. The criteria for achieving (100) oriented epitaxial growth on (100)111-V semiconductor surfaces are different for each class of material. The methods used to achieve 111-V/metal/Ill-V heteroepitaxial structures are described. The different approaches needed for the aluminides or gallides and the monopnictides form the basis for a comparative study.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20810
Show Author Affiliations
Chris J. Palmstrom, Bell Communications Research (United States)
Tim D. Sands, Bell Communications Research (United States)
James P. Harbison, Bell Communications Research (United States)
T. G. Finstad, Bell Communications Research (Norway)
Suzanne Mounier, Bell Communications Research (France)
Leigh T. Florez, Bell Communications Research (United States)
Vassilis G. Keramidas, Bell Communications Research (United States)
Jane G. Zhu, Cornell Univ. (United States)
C. B. Carter, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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