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Proceedings Paper

Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers
Author(s): B. Schwartz; T. Arguirov; M. Kittler; M. Oehme; K. Kostecki; E. Kasper; J. Schulze
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Paper Abstract

We analyzed Ge- and GeSn/Ge multiple quantum well (MQW) light emitting diodes (LEDs). The structures were grown by molecular beam epitaxy (MBE) on Si. In the Ge LEDs the active layer was 300 nm thick. Sb doping was ranging from 1×1018 to 1×1020 cm-3. An unintentionally doped Ge-layer served as reference. The LEDs with the MQWs consist of ten alternating GeSn/Ge-layers. The Ge-layers were 10 nm thick and the GeSn-layers were grown with 6 % Sn and thicknesses between 6 and 12 nm. The top contact of all LEDs was identical. Accordingly, the light extraction is comparable. The electroluminescence (EL) analysis was performed under forward bias at different currents. Sample temperatures between <300 K and 80 K were studied. For the reference LED the direct transition at 0.8 eV dominates. With increasing current the peak is slightly redshifted due to Joule heating. Sb doping of the active Ge-layer affects the intensity and at 3×1019 cm-3 the strongest emission appears. It is ~4 times higher as compared to the reference. Moreover a redshift of the peak position is caused by bandgap narrowing. The LEDs with undoped GeSn/Ge-MQWs as active layer show a very broad luminescence band with a peak around 0.65 eV, pointing to a dominance of the GeSn-layers. The light emission intensity is at least 17 times stronger as compared to the reference Ge-LED. Due to incorporation of Sn in the MQWs the active layer should approach to a direct semiconductor. In indirect Si and Ge we observed an increase of intensity with increasing temperature, whereas the intensity of GeSn/Ge-MQWs was much less affected. But a deconvolution of the spectra revealed that the energy of indirect transition in the wells is still below the one of the direct transition.

Paper Details

Date Published: 27 February 2015
PDF: 8 pages
Proc. SPIE 9367, Silicon Photonics X, 93671H (27 February 2015); doi: 10.1117/12.2080816
Show Author Affiliations
B. Schwartz, Brandenburgische Technische Univ. Cottbus (Germany)
T. Arguirov, Brandenburgische Technische Univ. Cottbus (Germany)
M. Kittler, Brandenburgische Technische Univ. Cottbus (Germany)
IHP GmbH - Leibniz-Institut für innovative Mikroelektronik (Germany)
M. Oehme, Univ. Stuttgart (Germany)
K. Kostecki, Univ. Stuttgart (Germany)
E. Kasper, Univ. Stuttgart (Germany)
J. Schulze, Univ. Stuttgart (Germany)

Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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