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Proceedings Paper

Wide graded potential wells: growth, electrical properties and theoretical results
Author(s): Klaus Ensslin; Achim Wixforth; Mani Sundaram; John H. English; Arthur C. Gossard
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Paper Abstract

Remotely doped parabolic quantum wells have been grown by MBE using a digital alloy approach to vary the Al content in the AlGai.As system. The monitoring of the beam fluxes as well as the measured subband separations confirm the precision of our growth technique. Using a front gate electrode we can depopulate the electrical subbands. Thus we can determine experimentally the subband separations showing close agreement with the results of our self-consistent calculations.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20808
Show Author Affiliations
Klaus Ensslin, Univ. of California/Santa Barbara (United States)
Achim Wixforth, Univ. of California/Santa Barbara (Germany)
Mani Sundaram, Univ. of California/Santa Barbara (United States)
John H. English, Univ. of California/Santa Barbara (United States)
Arthur C. Gossard, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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