Share Email Print

Proceedings Paper

Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams
Author(s): Olivier Vancauwenberghe; Nicole Herbots; Olof C. Hellman
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We are investigating dircctdeposition oflow energy (10 - 500 eV) ions to grow elemental and compound thin films at low temperature (R.T. - 700 K). We have developed a model to describe layer growth by Ion Beam Deposition (IBD) that takes into account not only atomic collision processes but also thermally-activated diffusion and recombination ofpoint defects during ion bombardment. Numerical simulations of our experimental conditions using this model have given us new insight into growth mechanisms during IBD. More specifically, we show in this work that the IBD growth rate is not limited by the sputtering yield only, but also by the recombination rate ofpoint defects at the surface; this rate depends on the depth distribution of the defects, which is deternined by the ion energy.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20805
Show Author Affiliations
Olivier Vancauwenberghe, Massachusetts Institute of Technology (United States)
Nicole Herbots, Massachusetts Institute of Technology (United States)
Olof C. Hellman, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

© SPIE. Terms of Use
Back to Top