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Proceedings Paper

Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy
Author(s): David W. Kisker; Paul H. Fuoss; Goullioud Renaud; K. L. Tokuda; Sean Brennan; J. L. Kahn
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Paper Abstract

Using a new in situ analysis tool, grazing incidence x-ray scattering, we have studied the surface reconstructions present prior to and during growth of ZnSe by organometallic vapor phase deposition. We have established that the GaAs native oxide is chemically reduced by the hydrogen ambient present during pre-growth heating. Following this cleaning procedure, the growth of ZnSe was found to occur in the presence of a p(2x1) reconstruction, characteristic of an array of Se dimers. This new technique can easily be extended to other growth systems.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20803
Show Author Affiliations
David W. Kisker, AT&T Bell Labs. (United States)
Paul H. Fuoss, AT&T Bell Labs. (United States)
Goullioud Renaud, AT&T Bell Labs. (United States)
K. L. Tokuda, AT&T Bell Labs. (United States)
Sean Brennan, Stanford Synchrotron Radiation Lab. (United States)
J. L. Kahn, Stanford Synchrotron Radiation Lab. (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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