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Proceedings Paper

Strong carrier localization in stacking faults in semipolar (11-22) GaN
Author(s): Serdal Okur; Morteza Monavarian; Saikat Das; Natalia Izyumskaya; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür
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Paper Abstract

The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL) and time- and polarization-resolved PL. We demonstrate that the carrier recombination dynamics are substantially influenced due to strong carrier localization in the stacking faults. In addition to nonradiative recombination, carrier trapping/detrapping and carrier transfer between the stacking faults and donors are also found to be among the mechanisms affecting the recombination dynamics at different temperatures. PL decay times of both I1-type BSF and 3.31 eV SF (E-type BSF or prismatic stacking fault) do not show temperature dependence up to 80 K while 3.31 eV SF exhibits longer PL decay times (~3 ns) at low temperatures as compared to I1-type BSF (~1 ns), indicative of lower efficiency for radiative recombination. After 80 K, PL decay times decreased by power of ~-1 and ~-2 for 3.31 eV SF and I1-type BSF, respectively. It is obtained from radiative decay times with respect to temperature that the carrier localization becomes higher in I1-type BSF compared to 3.31 eV SF increasing the temperature. I1-type BSF also shows higher PL intensity, which is attributed to larger density, and therefore, larger contribution to recombination dynamics as compared to other type of stacking faults. Polarization-resolved PL measurements also revealed that the degree of polarization for the I1-type BSF (0.30) was twice that for the 3.31 eV SF.

Paper Details

Date Published: 13 March 2015
PDF: 10 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632N (13 March 2015); doi: 10.1117/12.2080248
Show Author Affiliations
Serdal Okur, Virginia Commonwealth Univ. (United States)
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Saikat Das, Virginia Commonwealth Univ. (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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