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Proceedings Paper

Hybrid silicon mode-locked laser with improved RF power by impedance matching
Author(s): Bassem Tossoun; Dennis Derickson; Sudharsanan Srinivasan; John Bowers
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Paper Abstract

We design and discuss an impedance matching solution for a hybrid silicon mode-locked laser diode (MLLD) to improve peak optical power coming from the device. In order to develop an impedance matching solution, a thorough measurement and analysis of the MLLD as a function of bias on each of the laser segments was carried out. A passive component impedance matching network was designed at the operating frequency of 20 GHz to optimize RF power delivery to the laser. The hybrid silicon laser was packaged together in a module including the impedance matching circuit. The impedance matching design resulted in a 6 dB (electrical) improvement in the detected modulation spectrum power, as well as approximately a 10 dB phase noise improvement, from the MLLD. Also, looking ahead to possible future work, we discuss a Step Recovery Diode (SRD) driven impulse generator, which wave-shapes the RF drive to achieve efficient injection. This novel technique addresses the time varying impedance of the absorber as the optical pulse passes through it, to provide optimum optical pulse shaping.

Paper Details

Date Published: 27 February 2015
PDF: 10 pages
Proc. SPIE 9367, Silicon Photonics X, 93670P (27 February 2015); doi: 10.1117/12.2080117
Show Author Affiliations
Bassem Tossoun, California Polytechnic State Univ., San Luis Obispo (United States)
Dennis Derickson, California Polytechnic State Univ., San Luis Obispo (United States)
Sudharsanan Srinivasan, Univ. of California, Santa Barbara (United States)
John Bowers, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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