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Proceedings Paper

Optical techniques for in-situ analysis and control of semiconductor crystal growth
Author(s): David E. Aspnes
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Paper Abstract

A variety of optical techniques are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. Surface-sensitive approaches include reflectancedifference spectroscopy (RDS), second-harmonic generation (SHG), and laser light scattering (LLS). Bulk approaches include spectroellipsometry (SE) and spectroreflectometry (SR). I discuss representative examples, including the use of SE to determine thicknesses and compositions of AlGai_As layers on GaAs during crystal growth by organometallic molecular beam epitaxy (OMMBE), the use of RDS to measure surface dielectric anisotropy (SDA) spectra of various (001) GaAs surfaces relevant to crystal growth by MBE, and the use of RDS to establish kinetic limits to growth on (001) GaAs by atmospheric-pressure OMCVD.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20801
Show Author Affiliations
David E. Aspnes, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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