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Proceedings Paper

High sensitivity background absorption measurements in semiconductors
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Paper Abstract

Laser cooling in InGaP|GaAs double heterostructures (DHS) has been a sought after goal. Even though very high external quantum efficiency (EQE) has been achieved, background absorption has remained a bottleneck in achieving net cooling. The purpose of this study is to gain more insight into the source of the background absorption for InGaP|GaAs DHS as well as GaAs|AlGaAs DBRs by employing an excite-probe thermal Z-scan measurement.

Paper Details

Date Published: 10 March 2015
PDF: 8 pages
Proc. SPIE 9380, Laser Refrigeration of Solids VIII, 93800F (10 March 2015); doi: 10.1117/12.2080087
Show Author Affiliations
Nathan Giannini, The Univ. of New Mexico (United States)
Junior R. Silva, Univ. Estadual de mato Grosso do Sul (Brazil)
The Univ. of New Mexico (United States)
Chengao Wang, The Univ. of New Mexico (United States)
Alexander R. Albrecht, The Univ. of New Mexico (United States)
Seth D. Melgaard, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 9380:
Laser Refrigeration of Solids VIII
Richard I. Epstein; Denis V. Seletskiy; Mansoor Sheik-Bahae, Editor(s)

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