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Proceedings Paper

Spontaneous low-frequency resistance switching noise in a narrow MODFET
Author(s): Philippe Debray; Jose Vicente
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Paper Abstract

We have observed low-frequency discrete resistance switching noise in a Si modulation-doped GaAs/ A!GaAs narrow MODFET. Resistance measurements were done at 1.5 and 4.2K as a function of applied magnetic field B to understand the origin of the resistance fluctuations. The noise magnitude diminishes rapidly as the field is increased and also decreases as the temperature T is raised. This can be understood in terms of strongly correlated spontaneous emptying and filling of ensembles or clusters of interacting localized electron states. The effect of increasing B or T is to weaken the interactions ultimately giving away to individual states fluctuating between two metastable configurations. Any relation of this noise to quantum interference effect is unclear.

Paper Details

Date Published: 1 October 1990
PDF: 4 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20800
Show Author Affiliations
Philippe Debray, Ctr. d'Etudes Nucleaires de Sa (France)
Jose Vicente, Thomson-CSF (Spain)


Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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