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Proceedings Paper

Ammonothermal growth of GaN on HVPE crystals prepared with the use of ammonothermal seeds
Author(s): Robert Kucharski; Marcin Zajac; Malgorzata Iwinska; Romuald Stankiewicz; Tomasz Sochacki; Jan L. Weyher; Michal Bockowski
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Paper Details

Date Published:
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Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936305; doi: 10.1117/12.2079937
Show Author Affiliations
Robert Kucharski, Ammono Sp. z o.o. (Poland)
Marcin Zajac, Ammono S.A. (Poland)
Malgorzata Iwinska, Ammono S.A. (Poland)
Romuald Stankiewicz, Ammono S.A. (Poland)
Tomasz Sochacki, TopGaN sp. z o.o. (Poland)
Institute of High Pressure Physics PAS (Poland)
Jan L. Weyher, Institute of High Pressure Physics (Poland)
Michal Bockowski, TopGaN sp. z o.o. (Poland)
Institute of High Pressure Physics (Poland)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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