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Proceedings Paper

High-efficiency UV LEDs on sapphire
Author(s): Max Shatalov; Rakesh Jain; Alex Dobrinsky; Wenhong Sun; Yuri Bilenko; Jinwei Yang; Michael Shur; Remis Gaska
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Paper Abstract

We discuss factors affecting the external quantum efficiency, droop and reliability of AlGaN deep ultraviolet (DUV) light emitting diodes (LED) grown on sapphire substrates. Improvement of LED performance is achieved by suppression of the nonradiative recombination in epitaxial structures with dislocation density reduced to below 5x108 cm-2, transparent LED structure design and optimized UV encapsulation for enhanced light extraction. Relatively low light extraction efficiency remains to be a key factor limiting LED output power and quantum efficiency.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631M (13 March 2015); doi: 10.1117/12.2079874
Show Author Affiliations
Max Shatalov, Sensor Electronic Technology, Inc. (United States)
Rakesh Jain, Sensor Electronic Technology, Inc. (United States)
Alex Dobrinsky, Sensor Electronic Technology, Inc. (United States)
Wenhong Sun, Sensor Electronic Technology, Inc. (United States)
Yuri Bilenko, Sensor Electronic Technology, Inc. (United States)
Jinwei Yang, Sensor Electronic Technology, Inc. (United States)
Michael Shur, Rensselaer Polytechnic Institute (United States)
Remis Gaska, Sensor Electronic Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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