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Proceedings Paper

Recent progress in wafer-fused VECSELs emitting in the 1310nm waveband
Author(s): A. Sirbu; A. Rantamaki; V. Iakovlev; A. Mereuta; A. Caliman; N. Volet; J. Lyytikäinen; O. Okhotnikov; E. Kapon
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Paper Abstract

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.

Paper Details

Date Published: 4 March 2015
PDF: 7 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934907 (4 March 2015); doi: 10.1117/12.2079752
Show Author Affiliations
A. Sirbu, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
A. Rantamaki, Tampere Univ. of Technology (Finland)
V. Iakovlev, École Polytechnique Fédérale de Lausanne (Switzerland)
A. Mereuta, École Polytechnique Fédérale de Lausanne (Switzerland)
A. Caliman, École Polytechnique Fédérale de Lausanne (Switzerland)
N. Volet, École Polytechnique Fédérale de Lausanne (Switzerland)
J. Lyytikäinen, Tampere Univ. of Technology (Finland)
O. Okhotnikov, Tampere Univ. of Technology (Finland)
E. Kapon, École Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)

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