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Proceedings Paper

Comparison of electrical and optical characterization in Cu-gettered, semi-insulating GaAs
Author(s): Thomas E. Zirkle; Nam Soo Kang; Dieter K. Schroder; Ronald J. Roedel
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Paper Abstract

We have compared electrically and optically determined microscopic and macroscopic material parameters in Cu-doped, semi-insulating (SI) GaAs as a function of gettering. We find significant changes in the panchromatic scanning electron microscope room temperature cathodoluminescence (CL) images obtained before and after Cu contamination of undoped SI-GaAs. Electrical and optical measurements also indicate significant changes. These measurements include thermally stimulated current (TSC), Fourier infrared transform spectroscopy (FTIR), and photoconductive spectroscopy. After gettering by mechanical damage and subsequent heat treatment, the electrical characteristics revert to their pre-doping characteristics, indicating successful gettering.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20797
Show Author Affiliations
Thomas E. Zirkle, Arizona State Univ. (United States)
Nam Soo Kang, Arizona State Univ. (United States)
Dieter K. Schroder, Arizona State Univ. (United States)
Ronald J. Roedel, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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