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Proceedings Paper

White-light interferometric microscopy for wafer defect inspection
Author(s): Renjie Zhou; Christopher Edwards; Casey Bryniarski; Marjorie F. Dallmann; Gabriel Popescu; Lynford L. Goddard
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Paper Abstract

White-light imaging systems are free of laser-speckle. Thus, they offer high sensitivity for optical defect metrology, especially when used with interferometry based quantitative phase imaging. This can be a potential solution for wafer inspection beyond the 9 nm node. Recently, we built a white-light epi-illumination diffraction phase microscopy (epi-wDPM) for wafer defect inspection. The system is also equipped with an XYZ scanning stage and real-time processing. Preliminary results have demonstrated detection of 15 nm by 90 nm in a 9 nm node densely patterned wafer with bright-field imaging. Currently, we are implementing phase imaging with epi-wDPM for additional sensitivity.

Paper Details

Date Published: 11 March 2015
PDF: 6 pages
Proc. SPIE 9336, Quantitative Phase Imaging, 93362P (11 March 2015); doi: 10.1117/12.2079660
Show Author Affiliations
Renjie Zhou, Univ. of Illinois at Urbana-Champaign (United States)
Masschusetts Institute of Technology (United States)
Christopher Edwards, Univ. of Illinois at Urbana-Champaign (United States)
Casey Bryniarski, Univ. of Illinois at Urbana-Champaign (United States)
Marjorie F. Dallmann, Univ. of Illinois at Urbana-Champaign (United States)
Gabriel Popescu, Univ. of Illinois at Urbana-Champaign (United States)
Lynford L. Goddard, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 9336:
Quantitative Phase Imaging
Gabriel Popescu; YongKeun Park, Editor(s)

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