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Proceedings Paper

Theoretical modelling of GaN inversion layer transport properties
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Paper Details

Date Published:
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936317; doi: 10.1117/12.2079614
Show Author Affiliations
Sara Shishehchi, Boston Univ. (United States)
Enrico Bellotti, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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