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Proceedings Paper

HVPE growth of AlXGa1-XN templates for UV-LED applications
Author(s): Chi-Tsung Tsai; Jia-Hao Liang; Tsung-Yen Tsai; Ray-Hua Horng; Dong-Sing Wuu
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Paper Abstract

In this work, the AlxGa1-xN-on-sapphire template was successfully prepared by halide vapor phase epitaxy (HVPE) at 1100oC. The flow ratio (R) of the HCl flow rate through Al metal to the total HCl flow rates through Al and Ga metals was adjusted to control the Al content. The AlxGa1-xN films without phase separation can be obtained as the R value exceeds 0.67. The low R value strongly enhances the formation probability of GaN instead of AlxGa1-xN. This indicates that a sufficient concentration of the Al precursor is certainly vital for the formation of AlxGa1-xN compounds. The AlxGa1-xN prepared at the R value of 0.80 can achieve best crystallinity and the lowest surface roughness. Furthermore, the optical transmittance of the AlxGa1-xN under R=0.80 is above 70% between the wavelength of 225 nm and 400 nm. As a result, the AlxGa1-xN under R=0.80 can be regarded as a suitable growth template for the ultraviolet light-emitting diodes. The internal quantum efficiency of the 370 nm-quantum wells on the AlxGa1-xN/sapphire prepared under R=0.80 shows 127% improvement as compared with that on the undoped-GaN/sapphire.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630E (13 March 2015); doi: 10.1117/12.2079573
Show Author Affiliations
Chi-Tsung Tsai, National Chung Hsing Univ. (Taiwan)
Jia-Hao Liang, National Chung Hsing Univ. (Taiwan)
Tsung-Yen Tsai, National Chung Hsing Univ. (Taiwan)
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Da-Yeh Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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