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Proceedings Paper

Screening of the quantum confined stark-effect in AlN/GaN hetero-structures based on GaN nanowires with Germanium doping
Author(s): Nils Rosemann; Pascal Hille; Jan Müßener; Pascal Becker; Maria de la Mata; César Magén Domínguez; Jordi Arbiol; Jörg Teubert; Jörg Schörmann; Martin H. Eickhoff; Sangam Chatterjee
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Paper Details

Date Published:
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Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630Y; doi: 10.1117/12.2079528
Show Author Affiliations
Nils Rosemann, Philipps-Univ. Marburg (Germany)
Pascal Hille, Justus-Liebig-Univ. Giessen (Germany)
Jan Müßener, Justus-Liebig-Univ. Giessen (Germany)
Pascal Becker, Philipps-Univ. Marburg (Germany)
Maria de la Mata, Institut de Ciència de Materials de Barcelona (Spain)
César Magén Domínguez, Instituto de Nanociencia de Aragon (Spain)
Jordi Arbiol, Institut de Ciència de Materials de Barcelona (Spain)
Institució Catalana de Recerca i Estudis Avançats (Spain)
Jörg Teubert, Justus-Liebig-Univ. Giessen (Germany)
Jörg Schörmann, Justus-Liebig-Univ. Giessen (Germany)
Martin H. Eickhoff, Justus-Liebig-Univ. Giessen (Germany)
Sangam Chatterjee, Philipps-Univ. Marburg (Germany)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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