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Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs
Author(s): Michael Eckstein; Abram Jakubowicz; Michael Bode; Hanns-Ulrich Habermeier
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Paper Abstract

Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) contrast of dislocations in GaAs show a strong temperature dependence. This is not only due to a variation of the recombination properties of the defects, which are a function of the defect energy level in the gap, but also due to the variation of diffusion length with temperature and their absolute value, which depends on doping type and doping concentration of the material. The experimental results are interpreted in the framework of model calculations for defect contrast and indicate a decreasing diffusion length and increasing recombination efficiency of dislocations with decreasing temperature in the range of 20 to 300 K.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20795
Show Author Affiliations
Michael Eckstein, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Abram Jakubowicz, Max-Planck-Institut fuer Festk (Switzerland)
Michael Bode, Max-Planck-Institut fuer Festk (United States)
Hanns-Ulrich Habermeier, Max-Planck-Institut fuer Festkoerperforschung (Germany)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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