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Proceedings Paper

1180nm VECSEL with 50 W output power
Author(s): Emmi Kantola; Tomi Leinonen; Sanna Ranta; Miki Tavast; Jussi-Pekka Penttinen; Mircea Guina
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Paper Abstract

We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ~100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

Paper Details

Date Published: 4 March 2015
PDF: 6 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 93490U (4 March 2015); doi: 10.1117/12.2079480
Show Author Affiliations
Emmi Kantola, Tampere Univ. of Technology (Finland)
Tomi Leinonen, Tampere Univ. of Technology (Finland)
Sanna Ranta, Tampere Univ. of Technology (Finland)
Miki Tavast, Tampere Univ. of Technology (Finland)
Jussi-Pekka Penttinen, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)

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