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Proceedings Paper

High-power external cavity CW red laser diode
Author(s): Hong Joo Song; Jun Ho Lee; Jiyeon Park; Jong Hwan Park; Hong Man Na; Jung Ho Park
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Paper Abstract

An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.

Paper Details

Date Published: 1 April 2015
PDF: 6 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480R (1 April 2015); doi: 10.1117/12.2079456
Show Author Affiliations
Hong Joo Song, Korea Electronics Technology Institute (Korea, Republic of)
Korea Univ. (Korea, Republic of)
Jun Ho Lee, Korea Electronics Technology Institute (Korea, Republic of)
Jiyeon Park, Korea Electronics Technology Institute (Korea, Republic of)
Yonsei Univ. (Korea, Republic of)
Jong Hwan Park, Korea Electronics Technology Institute (Korea, Republic of)
Korea Univ. (Korea, Republic of)
Hong Man Na, Korea Electronics Technology Institute (Korea, Republic of)
Korea Univ. (Korea, Republic of)
Jung Ho Park, Korea Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)

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