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Proceedings Paper

Epitaxial growth of luminescent β-FeSi2 on modified Si(111) surface by silver
Author(s): Kensuke Akiyama; Hiroshi Funakubo
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Paper Abstract

Luminescent epitaxial β-FeSi2 films were grown on the Ag-layer pre-coated Si(111) substrates. These epitaxial β-FeSi2 films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The full width at half maximum of the rocking curve of β-FeSi2 202/220 was 0.19o for the films deposited at 760oC on the Si(111) substrates with 85 nm-thick silver layer. The transmission electron microscope analysis indicated the flat and steep β-FeSi2/Si interface. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi2 films was larger than that of the directly grown β-FeSi2 films on the Si(111) without silver layer, indicating the decreasing of the density of nonradiative recombination centers in β-FeSi2 film.

Paper Details

Date Published: 27 February 2015
PDF: 8 pages
Proc. SPIE 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII, 93660R (27 February 2015); doi: 10.1117/12.2079405
Show Author Affiliations
Kensuke Akiyama, Kanagawa Industrial Technology Ctr. (Japan)
Tokyo Institute of Technology (Japan)
Hiroshi Funakubo, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 9366:
Smart Photonic and Optoelectronic Integrated Circuits XVII
Louay A. Eldada; El-Hang Lee; Sailing He, Editor(s)

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