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Proceedings Paper

Microstructure-property studies for semiconductor interfaces using high-resolution electron microscopy
Author(s): Robert Sinclair
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Paper Abstract

Interface structure can play a critical role in determining the properties of microelectronic devices. Because morphological features on the sub-nanometer scale are often involved, high resolution electron microscopy (HREM) is becoming increasingly used as a characterization tool. The application of HREM is illustrated in this article by reference to work on Si-Si02 and Ti-Si interfaces, which are both important in contemporary integratei circuits. q

Paper Details

Date Published: 1 October 1990
PDF: 3 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20794
Show Author Affiliations
Robert Sinclair, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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