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Proceedings Paper

>8W GaInNAs VECSEL emitting at 615 nm
Author(s): Tomi Leinonen; Jussi-Pekka Penttinen; Ville-Markus Korpijärvi; Emmi Kantola; Mircea Guina
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Paper Abstract

We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.

Paper Details

Date Published: 4 March 2015
PDF: 6 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934909 (4 March 2015); doi: 10.1117/12.2079162
Show Author Affiliations
Tomi Leinonen, Tampere Univ. of Technology (Finland)
Jussi-Pekka Penttinen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Emmi Kantola, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)

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