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Proceedings Paper

Quantum-well width determination using RHEED oscillations
Author(s): Emil S. Koteles; Boris S. Elman
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Paper Abstract

GaAs/A1GaAs quantum well (QW) widths were directly determined in-situ during MBE growth using reflection high energy electron diffraction (RHEED) intensity oscillations. Heavy-. and light-hole exciton transition energies in these QWs were measured using photoluminescence excitation (PLE) spectroscopy. We were able to obtain very good fits between calculated curves of these energies, using the standard quantum mechanical model for a QW, and the experimentally determined energies as a function of RHEEDdetermined QW widths. Thus, using this model and its fitting parameters, it is possible to derive QW widths accurately using only the data from PLE spectroscopy.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20791
Show Author Affiliations
Emil S. Koteles, GTE Labs. Inc. (Canada)
Boris S. Elman, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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