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Proceedings Paper

A CWDM photoreceiver module for 10 Gb/s x 4ch interconnection based on a vertical-illumination-type Ge-on-Si photodetectors and a silica-based AWG
Author(s): Ki-Seok Jang; Jiho Joo; Taeyong Kim; Sanghoon Kim; Jin Hyuk Oh; In Gyoo Kim; Sun Ae Kim; Gyungock Kim
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Paper Abstract

We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ~0.9 A/W responsivity with 13 GHz bandwidth at λ ~ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11 ~ -12.2 dBm sensitivity at a BER = 10-12.

Paper Details

Date Published: 3 April 2015
PDF: 6 pages
Proc. SPIE 9368, Optical Interconnects XV, 93680C (3 April 2015); doi: 10.1117/12.2078844
Show Author Affiliations
Ki-Seok Jang, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jiho Joo, Electronics and Telecommunications Research Institute (Korea, Republic of)
Taeyong Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sanghoon Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Jin Hyuk Oh, Electronics and Telecommunications Research Institute (Korea, Republic of)
In Gyoo Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Sun Ae Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)
Gyungock Kim, Electronics and Telecommunications Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 9368:
Optical Interconnects XV
Henning Schröder; Ray T. Chen, Editor(s)

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