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Proceedings Paper

Atomic scale imaging of the structure and chemistry of semiconductor interfaces by Z-contrast stem
Author(s): Stephen J. Pennycook; D. E. Jesson; M. F. Chisholm
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Paper Abstract

A new technique for high-resolution electron microscopy is described together with a number of applications involving semiconductor interfaces. Optically, this technique represents the realization of incoherent imaging at atomic resolution, with the advantages over conventional coherent imaging methods of improved resolution and an unambiguous, simply interpretable image. In addition, the image shows strong compositional sensitivity, thus providing a direct map of a material's structure and chemistry on the atomic scale.

Paper Details

Date Published: 1 October 1990
PDF: 13 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20788
Show Author Affiliations
Stephen J. Pennycook, Oak Ridge National Lab. (United States)
D. E. Jesson, Oak Ridge National Lab. (United States)
M. F. Chisholm, Oak Ridge National Lab. (United States)


Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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