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Proceedings Paper

Effects of inversion asymmetry on GaAs quantum wires
Author(s): Johnson Lee; Milton O. Vassell
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Paper Abstract

The spin splittings E of the conduction subbands of zinc-blende semiconductors which possess inversion asymmetry of the microscopic crystal potentials are investigated theoretically for quantum wire structure. Due to inversion asymmetry, the 2 x 2 Hamiltonian in the spin basis has nonvanishing off-diagonal elements. We have solved the equivalent matrix elgenvalue problem obtained by expanding the eigenvectors in an N-term Fourier series chosen to satisfy the zero boundary conditions automatically. By increasing N step by step, the eigenenergies are shown to converge quickly to assigned accuracy. For a quantum wire with sizes L and L (I I [001]), and for free propagation wavevector k, we find that (1) when Ly is parallel to [0101, E increase linearly with k if L L2, but become negligible ifL =L; (2) when L is parallel to [1 10], \E as a function ofk can be Nshaped; and (3) when L and L are fixed and is rotated around LEshow 4 mm symmetry.

Paper Details

Date Published: 1 October 1990
PDF: 6 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20787
Show Author Affiliations
Johnson Lee, GTE Labs. Inc. (United States)
Milton O. Vassell, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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