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Proceedings Paper

Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities
Author(s): Tsung Sheng Kao; Tzeng-Tsong Wu; Che-Wei Tsao; Jyun-Hao Lin; Da-wei Lin; Shyh-Jer Huang; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang; Yan-Kuin Su
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Paper Abstract

In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence (μ-PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavities show high quality factor (Q) values in the light emission performance which can be up to 4.3×103. Moreover, the degree of polarization (DOP) of the light emission from the nonpolar GaN-based PC defect cavities was measured to achieve around 64 % along the m crystalline direction.

Paper Details

Date Published: 27 February 2015
PDF: 8 pages
Proc. SPIE 9372, High Contrast Metastructures IV, 93720C (27 February 2015); doi: 10.1117/12.2078577
Show Author Affiliations
Tsung Sheng Kao, National Chiao Tung Univ. (Taiwan)
Tzeng-Tsong Wu, National Chiao Tung Univ. (Taiwan)
Che-Wei Tsao, National Chiao Tung Univ. (Taiwan)
Jyun-Hao Lin, National Cheng Kung Univ. (Taiwan)
Da-wei Lin, National Chiao Tung Univ. (Taiwan)
Shyh-Jer Huang, Univ. of California, Los Angeles (United States)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Shing-Chung Wang, National Chiao Tung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Kun-Shan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9372:
High Contrast Metastructures IV
Connie J. Chang-Hasnain; David Fattal; Fumio Koyama; Weimin Zhou, Editor(s)

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