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Proceedings Paper

Ion etching of ultranarrow structures
Author(s): Axel Scherer; B. P. Van der Gaag
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Paper Abstract

We describe the use of Polymethylmethacrylate as both electron beam sensitive resist and ion etch mask for high-resolution pattern transfer. By using high-resolution electron beam lithography, chemically assisted ion beam etching, and in-situ metallization, we have fabricated ultra-narrow gates with lateral dimensions below 20 nm, spaced with < 50 nm pitch on high mobility 2D electron gas material. This technique, which is thought to provide extremely small lateral electron depletion lengths and well defined confienement potentials, allows us to produce new and more complicated structures for the study of quantum transport.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20784
Show Author Affiliations
Axel Scherer, Bell Communications Research (United States)
B. P. Van der Gaag, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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