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Proceedings Paper

Induced strain in silicon waveguides and couplers
Author(s): G. B. Montanari; F. Mancarella; R. Balboni; D. Marini; F. Corticelli; M. Sanmartin; M. Ferri; G. Bolognini
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Paper Abstract

In this work we report the results of both theoretical and experimental strain analysis of Silicon waveguides and couplers. Simulations of induced stress and strain distributions on photonic structures (waveguides with 450 × 220 nm cross section) have been performed taking into account a ~375 nm thick Si3N4 straining layer. The Convergent Beam Electron Diffraction (CBED) technique has also been employed to provide locally accurate strain measurements on fabricated silicon rib and coupling structures across the nitride-to-silicon interface, showing a good match between multiphysics simulations and measurements along the rib cross-section, resulting in notable attained strain levels.

Paper Details

Date Published: 27 February 2015
PDF: 6 pages
Proc. SPIE 9367, Silicon Photonics X, 93671L (27 February 2015); doi: 10.1117/12.2078383
Show Author Affiliations
G. B. Montanari, Lab. MIST E-R (Italy)
F. Mancarella, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
R. Balboni, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
D. Marini, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
Univ. degli Studi di Bologna (Italy)
F. Corticelli, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
M. Sanmartin, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
M. Ferri, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
G. Bolognini, Istituto per la Microelettronica e Microsistemi, CNR (Italy)


Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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