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Proceedings Paper

Fabrication of GaAs nanometer scale structures by dry etching
Author(s): Tatsuro Iwabuchi; Chih-Li Chuang; Galina Khitrova; Mial E. Warren; Arturo Chavez-Pirson; Hyatt M. Gibbs; Dror Sarid; Mark J. Gallagher
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Paper Abstract

Nanometer-sized features as small as 400Ahave been fabricated in single-quantum-well GaAs/A1GaAs heterostructures for studies of quantum confinement effects in quantum dots. The features have been fabricated by dry-etching techniques using nanometer-sized etch masks by a novel surface deposition of colloidally-suspended spherical particles. SEM was used to examine the feature size.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20783
Show Author Affiliations
Tatsuro Iwabuchi, Optical Sciences Ctr./Univ. of (Japan)
Chih-Li Chuang, Optical Sciences Ctr./Univ. of (United States)
Galina Khitrova, Optical Sciences Ctr./Univ. of (United States)
Mial E. Warren, Optical Sciences Ctr./Univ. of (United States)
Arturo Chavez-Pirson, Optical Sciences Ctr./Univ. of (Japan)
Hyatt M. Gibbs, Optical Sciences Ctr./Univ. of (United States)
Dror Sarid, Optical Sciences Ctr./Univ. of (United States)
Mark J. Gallagher, Optical Sciences Ctr./Univ. of (United States)


Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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