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Proceedings Paper

A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon
Author(s): E. Stark; T. Frost; S. Jahangir; A. Hazari; S. Deshpande; P. Bhattacharya
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Paper Abstract

A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by Jth = 1.76 kA/cm2 (green) and 2.94kA/cm2 (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz.

Paper Details

Date Published: 10 March 2015
PDF: 9 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820R (10 March 2015); doi: 10.1117/12.2078262
Show Author Affiliations
E. Stark, Univ. of Michigan (United States)
T. Frost, Univ. of Michigan (United States)
S. Jahangir, Univ. of Michigan (United States)
A. Hazari, Univ. of Michigan (United States)
S. Deshpande, Univ. of Michigan (United States)
P. Bhattacharya, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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