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Proceedings Paper

Single and double oxidations in a 980-nm VCSEL: impact on certain electrical and optical properties
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Paper Abstract

In this paper we present the simulation results of an oxide-confined, InGaAs/GaAs based vertical-cavity surface-emitting laser with three different configurations of the oxide apertures. We analyze the impact of the number and position of oxide layers on the carrier distribution in the laser's active region, distribution of the optical modes, and modulation properties.

Paper Details

Date Published: 4 March 2015
PDF: 9 pages
Proc. SPIE 9381, Vertical-Cavity Surface-Emitting Lasers XIX, 93810N (4 March 2015); doi: 10.1117/12.2078184
Show Author Affiliations
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Tomasz Czyszanowski, Lodz Univ. of Technology (Poland)
Jarosław Walczak, Lodz Univ. of Technology (Poland)
JWS (Poland)
Robert Sarzała, Lodz Univ. of Technology (Poland)
Philip Moser, Technische Univ. Berlin (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
James A. Lott, Technische Univ. Berlin (Germany)
Michał Wasiak, Lodz Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 9381:
Vertical-Cavity Surface-Emitting Lasers XIX
Chun Lei; Kent D. Choquette, Editor(s)

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