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Proceedings Paper

Ammonothermal growth of polar and non-polar bulk GaN crystal
Author(s): Yutaka Mikawa; Takayuki Ishinabe; Shinichiro Kawabata; Tae Mochizuki; Atsuhiko Kojima; Yuji Kagamitani; Hideo Fujisawa
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Paper Abstract

SCAATTM has been developed as a novel ammonothermal method which enables to obtain strain free, high quality and large size bulk gallium nitride (GaN) crystals under high pressure and high temperature super-critical ammonia. One of the unique features of this technique is relatively high growth rate of more than a few hundred micrometers per day toward polar and non-polar axis with excellent crystalline quality. The morphology, X-ray rocking curve, etch pit density and electric properties are presented.

Paper Details

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936302 (13 March 2015); doi: 10.1117/12.2078137
Show Author Affiliations
Yutaka Mikawa, Mitsubishi Chemical Corp. (Japan)
Takayuki Ishinabe, Mitsubishi Chemical Corp. (Japan)
Shinichiro Kawabata, Mitsubishi Chemical Corp. (Japan)
Tae Mochizuki, Mitsubishi Chemical Corp. (Japan)
Atsuhiko Kojima, Mitsubishi Chemical Corp. (Japan)
Yuji Kagamitani, Mitsubishi Chemical Corp. (Japan)
Hideo Fujisawa, Mitsubishi Chemical Corp. (Japan)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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