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Proceedings Paper

Theory and observation on non-linear effects limiting the coherence properties of high-Q hybrid Si/III-V lasers
Author(s): Yaakov Vilenchik; Christos T. Santis; Scott T. Steger; Naresh Satyan; Amnon Yariv
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Paper Abstract

Hybrid Si/III-V is a promising platform for semiconductor narrow-linewidth lasers, since light can be efficiently stored in low loss silicon and amplified in III-V materials. The introduction of a high-Q cavity in silicon as an integral part of the laser's resonator leads to major reduction of the laser linewidth. However, the large intra-cavity field intensity resulting from the high-Q operation gives rise to non-linear effects. We present a theoretical model based on non-linear rate equations to study the effect of two-photon absorption and induced free-carrier absorption in silicon on the laser's performance. The predictions from this model are compared to the experimental results obtained from narrow-linewidth lasers fabricated by us. It is shown to have an effect on the linearity of the L-I curve, and to reduce the achievable Schawlow- Townes linewidth.

Paper Details

Date Published: 10 March 2015
PDF: 9 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820N (10 March 2015); doi: 10.1117/12.2078067
Show Author Affiliations
Yaakov Vilenchik, California Institute of Technology (United States)
Christos T. Santis, California Institute of Technology (United States)
Scott T. Steger, California Institute of Technology (United States)
Naresh Satyan, Telaris Inc. (United States)
Amnon Yariv, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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