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Proceedings Paper

III-Nitride high temperature single-photon sources
Author(s): Pallab Bhattacharya; Saniya Deshpande; Thomas Frost; Arnab Hazari
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Paper Abstract

Nitride based GaN and InGaN quantum dots are excellent single-photon emitters at high temperature owing to their wide bandgap and large exciton binding energy [1-5]. In this work, two different molecular beam epitaxy (MBE) grown nanostructures have been investigated for single-photon emission: InGaN/GaN disk-in-nanowire and InGaN/GaN self-organized quantum dot. Single-photon emission under both optical and electrical excitation has been observed from a single InGaN quantum contained in a GaN nanowire p-n junction. We demonstrate electrically driven single-photon emission, with a g (2)(0) = 0.35, from a single InGaN quantum dot emitting in the green spectral range (λ=520 nm) up to 125 K. Additionally, a self-organized InGaN/GaN single quantum dot diode was grown and fabricated. Emission from a single quantum dot (λ=620 nm) shows single-photon emission with g(2)(0) = 0.29 at room temperature. On-demand single-photon emission by electrical pumping of the quantum dot at an excitation repetition rate of 200 MHz was demonstrated.

Paper Details

Date Published: 10 March 2015
PDF: 12 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 938207 (10 March 2015); doi: 10.1117/12.2078001
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Saniya Deshpande, Univ. of Michigan (United States)
Thomas Frost, Univ. of Michigan (United States)
Arnab Hazari, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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