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Proceedings Paper

Polarization-dependent photocurrent in MoS2 phototransistor
Author(s): Jiu Li; Wentao Yu; Saisai Chu; Hong Yang; Kebin Shi; Qihuang Gong
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Paper Abstract

Monolayer or few-layer molybdenum disulfide (MoS2) has attracted increasing interests in studying light-induced electronic effect due to its prominent photo-responsivity at visible spectral range, fast photo-switching rate and high channel mobility. However, the atomically thin layers make the interaction between light and matter much weaker than that in bulk state, hampering its application in two-dimensional material optoelectronics. One of recent efforts was to utilize resonantly enhanced localized surface plasmon for boosting light-matter interaction in MoS2 thin layer phototransistor. Randomly deposited metallic nano-particles were previously reported to modify surface of a back-gated MoS2 transistor for increasing light absorption cross-section of the phototransistor. Wavelength-dependent photocurrent enhancement was observed. In this paper, we report on a back-gated multilayer MoS2 field-effect-transistor (FET), whose surface is decorated with oriented gold nanobar array, of which the size of a single nanobar is 60nm:60nm:120nm. With these oriented nanostructures, photocurrent of the MoS2 FET could be successfully manipulated by a linear polarized incident 633nm laser, which fell into the resonance band of nanobar structure. We find that the drain-source current follows cos2θ relationship with respect to the incident polarization angle. We attribute the polarization modulation effect to the localized enhancement nature of gold nanobar layer, where the plasmon enhancement occurs only when the polarization of incident laser parallels to the longitudinal axis of nanobars and when the incident wavelength matches the resonance absorption of nanobars simultaneously. Our results indicate a promising application of polarization-dependent plasmonic manipulation in two-dimension semiconductor materials and devices.

Paper Details

Date Published: 16 March 2015
PDF: 7 pages
Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93571F (16 March 2015); doi: 10.1117/12.2077964
Show Author Affiliations
Jiu Li, Peking Univ. (China)
Wentao Yu, Peking Univ. (China)
Saisai Chu, Peking Univ. (China)
Hong Yang, Peking Univ. (China)
Kebin Shi, Peking Univ. (China)
Collaborative Innovation Ctr. of Quantum Matter (China)
Qihuang Gong, Peking Univ. (China)
Collaborative Innovation Ctr. of Quantum Matter (China)


Published in SPIE Proceedings Vol. 9357:
Physics and Simulation of Optoelectronic Devices XXIII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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