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Proceedings Paper

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm
Author(s): Ville-Markus Korpijärvi; Emmi L. Kantola; Tomi Leinonen; Mircea Guina
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Paper Abstract

We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

Paper Details

Date Published: 4 March 2015
PDF: 6 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 93490D (4 March 2015); doi: 10.1117/12.2077517
Show Author Affiliations
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Emmi L. Kantola, Tampere Univ. of Technology (Finland)
Tomi Leinonen, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)

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