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Proceedings Paper

Photoelectric properties of GaAs p-n-junction under illumination of intense laser radiation
Author(s): S. Ašmontas; J. Gradauskas; A. Sužiedėlis; A. Šilėnas; V. Vaičikauskas; O. Žalys; G. Steikūnas; A. Steikūnienė
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Paper Abstract

Results of experimental investigation of photoelectric properties of GaAs p-n-junction illuminated by short laser pulses of 1.06 μm wavelength are presented. The influence of laser radiation intensity and external bias voltage on the formation of photoresponse voltage has been studied. Free carrier heating was recognized to influence significantly the magnitude of the measured photovoltage. Possibility to improve the conversion efficiency of solar cells is discussed.

Paper Details

Date Published: 22 October 2014
PDF: 5 pages
Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 942102 (22 October 2014); doi: 10.1117/12.2077437
Show Author Affiliations
S. Ašmontas, Ctr. for Physical Sciences and Technology (Lithuania)
J. Gradauskas, Ctr. for Physical Sciences and Technology (Lithuania)
A. Sužiedėlis, Ctr. for Physical Sciences and Technology (Lithuania)
A. Šilėnas, Ctr. for Physical Sciences and Technology (Lithuania)
V. Vaičikauskas, Ctr. for Physical Sciences and Technology (Lithuania)
O. Žalys, Ctr. for Physical Sciences and Technology (Lithuania)
G. Steikūnas, Ctr. for Physical Sciences and Technology (Lithuania)
A. Steikūnienė, Ctr. for Physical Sciences and Technology (Lithuania)


Published in SPIE Proceedings Vol. 9421:
Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8)
Janis Spigulis, Editor(s)

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