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Proceedings Paper

Scaling of transconductance in ultra-submicron GaAs MESFETs and HEMTs
Author(s): Joseph M. Ryan; Jaeheon Han; Alfred M. Kriman; David K. Ferry; Peter G. Newman
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Paper Abstract

Ultra-submicron GaAs MESFETs have been fabricated with gate lengths ranging from 25 nm to 80 nm, using an electron-beam lithography process. The MESFETs were fabricated on vapor-phase grown wafers. The HEMT devices were fabricated on MBE grown wafers. Measurements of the transconductances of these devices, as a function of the effective gate length, exhibit transconductance degradation due to a diminishing aspect ratio. Velocity overshoot, saturation due to substrate current (MESFETs), real space transfer (HEMTs) and/or source dependent minimum acceleration lengths(both). In addition, the HEMTs with gate lengths less than 3Onm exhibit exponentially dependent current. This suggests that tunneling is the dominant current mechanism and the final limit to scaling of conventional FETs has been observed.

Paper Details

Date Published: 1 October 1990
PDF: 6 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20771
Show Author Affiliations
Joseph M. Ryan, Arizona State Univ. (United States)
Jaeheon Han, Arizona State Univ. (United States)
Alfred M. Kriman, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
Peter G. Newman, U.S. Army Electronics Technology and Devices Lab. (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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