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Proceedings Paper

Demonstration of high-resolution doping profile mapping using terahertz time domain spectroscopy with electrochemical anodization
Author(s): Chih-Yu Jen; Gaurav Tulsyan; Christiaan Richter
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Paper Abstract

In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. Here we report follow up work demonstrating doping profile measurement by first precisely removing a thin layer (currently ~ 20 nm) from the junction by anodization followed by selective oxide etching. The anodization-etching step is followed by measuring the terahertz transmission using THz-TDS. The anodization and terahertz measurement steps are then alternated. The doping profile can then be reconstructed using the resultant dataset. In this work we share results obtained on phosphorus doped silicon wafers. We find good agreement between the measured transmitted terahertz spectra and the simulated terahertz spectra for all etching cycles when the doping profile used in the simulations agrees with SIMS analysis. We conclude that anodization combined with THz-TDS can potentially be a high resolution destructive doping profile mapping method.

Paper Details

Date Published: 14 March 2015
PDF: 8 pages
Proc. SPIE 9362, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII, 93620R (14 March 2015); doi: 10.1117/12.2077009
Show Author Affiliations
Chih-Yu Jen, Rochester Institute of Technology (United States)
Gaurav Tulsyan, Rochester Institute of Technology (United States)
Christiaan Richter, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9362:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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